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SAMSUNG 1TB 970 EVO PLUS NVME M.2 INTERNAL SSD

Availability:

10 in stock


7,030.00 8,450.00

10 in stock

Features

Product Type NVMe SSD
Storage Type
Internal
Interface PCIe Gen 3.0 x 4, NVMe 1.3
Read/Write Speeds 3,500/3,300 MB/s
Usage Application Client PCs
Series 970 EVO Plus
Storage Capacity
  1,000GB (1GB=1 Billion byte by IDEMA) * Actual usable capacity may be less (due to formatting, partitioning, operating system, applications or otherwise)
Key Features Sequential Read Speed
  Up to 3,500 MB/s * Performance may vary based on system hardware & configuration
  Sequential Write Speed
  Up to 3,300 MB/s * Performance may vary based on system hardware & configuration
  Random Read Speed
  Random Read (4KB, QD32): Up to 600,000 IOPS; Random Read (4KB, QD1): Up to 19,000 IOPS * Performance may vary based on system hardware & configuration
  Random Write Speed
  Random Write (4KB, QD32): Up to 550,000 IOPS; Random Write (4KB, QD1): Up to 60,000 IOPS * Performance may vary based on system hardware & configuration
  NAND Flash
  Samsung V-NAND 3-bit MLC
General Average Power Consumption (system level)
  * Average: 6 W * Maximum: 9 W (Burst mode) * Actual power consumption may vary depending on system hardware & configuration
  Power consumption (Idle)
  Max. 30 mW * Actual power consumption may vary depending on system hardware & configuration
  Voltage
  3.3 V ± 5 % Allowable voltage
  Reliability (MTBF)
  1.5 Million Hours Reliability (MTBF
Environmental Specs Operating Temperature
  0 – 70 ? Operating Temperature
  Shock
  1,500 G & 0.5 ms (Half sine)
Form Factor Product
  M.2 (2280
Dimensions (W x H x D) 3.16″ x 0.87″ x 0.09″
 
Weight
  30g
SKU: ETK-Computer-Harddisk-1103 Categories: , Brand:

Features

Product Type NVMe SSD
Storage Type
Internal
Interface PCIe Gen 3.0 x 4, NVMe 1.3
Read/Write Speeds 3,500/3,300 MB/s
Usage Application Client PCs
Series 970 EVO Plus
Storage Capacity
  1,000GB (1GB=1 Billion byte by IDEMA) * Actual usable capacity may be less (due to formatting, partitioning, operating system, applications or otherwise)
Key Features Sequential Read Speed
  Up to 3,500 MB/s * Performance may vary based on system hardware & configuration
  Sequential Write Speed
  Up to 3,300 MB/s * Performance may vary based on system hardware & configuration
  Random Read Speed
  Random Read (4KB, QD32): Up to 600,000 IOPS; Random Read (4KB, QD1): Up to 19,000 IOPS * Performance may vary based on system hardware & configuration
  Random Write Speed
  Random Write (4KB, QD32): Up to 550,000 IOPS; Random Write (4KB, QD1): Up to 60,000 IOPS * Performance may vary based on system hardware & configuration
  NAND Flash
  Samsung V-NAND 3-bit MLC
General Average Power Consumption (system level)
  * Average: 6 W * Maximum: 9 W (Burst mode) * Actual power consumption may vary depending on system hardware & configuration
  Power consumption (Idle)
  Max. 30 mW * Actual power consumption may vary depending on system hardware & configuration
  Voltage
  3.3 V ± 5 % Allowable voltage
  Reliability (MTBF)
  1.5 Million Hours Reliability (MTBF
Environmental Specs Operating Temperature
  0 – 70 ? Operating Temperature
  Shock
  1,500 G & 0.5 ms (Half sine)
Form Factor Product
  M.2 (2280
Dimensions (W x H x D) 3.16″ x 0.87″ x 0.09″
 
Weight
  30g

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